Author: "Kunihiro Suzuki"

Bipolar Transistor and MOSFET Device Models

Personal Book: US $129 Special Offer (PDF + Printed Copy): US $257
Printed Copy: US $193
Library Book: US $516
ISBN: 978-1-68108-262-2
eISBN: 978-1-68108-261-5 (Online)
DOI: 10.2174/97816810826151160101


Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include:

- step by step, easy to understand presentation of model information on innovative semiconductor devices

- an overview of model derivation, assumptions, approximations and limitations

- novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift

Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.


Review 1

“This book starts from a summary of semiconductor basics and a detailed treatment of the pn-junction. These topics have been explained in other books before, but it is a perfect warm-up to let the memory be refreshed by the authors concise language and numerous excellent figures. In the main part, one is taken to a fascinating journey on analytic models for bipolar transistors and MOSFETs. Many device types and operation modes are presented. Analytic models are first derived for idealized, simple transistors and then elaborated further to catch practical aspects of real devices. The equations and parameters are used to clearly understand devices operation and characteristics. The book focusses on key features of established technology, but also shows selected novel aspects. Numeric modelling (TCAD) is not the main focus of this book, but sometimes TCAD device simulation results are shown as a solid reference to demonstrate the validity of analytic models or to refine them. Throughout the book, the author presents numerous model equations. Scanning all equations, definitions, formulas, and derivations in this book may be exhausting, but those interested in model details will find abundant material illustrating successful model building from clear starting points. Readers who are less fond of following mathematical derivations in detail may need to omit some of them. The joyful study of many relations between doping, geometry, and electrical characteristics sharpens the senses on what makes devices good, and lets the reader participate in the authors vast experience in transistor development.”

Dr. Christoph Zechner
Advanced TCAD modeling
Synopsys GmbH, Germany

Review 2

"An interesting and rather comprehensive treatment of device physics, relevant to bipolar transistors; the author’s careful and detailed work is indeed very impressive."

Prof. Robert Dutton,
School of Engineering,
Stanford University

Review 3

"I like this book because important formulae related to semiconductors are carefully explained step by step which makes the book helpful for gaining a deep understanding of semiconductor physics (without skipping between formulae). The derivation of Fermi energy distribution presented in the text is impressive, along with information about electron up/down spin concepts which most other text books do not mention. This is OK up to now. However, future semiconductor device below 5nm node parameters will be changed to use or control the electron spin like MRAM or other spin logic devices. This book will prepare readers for understanding the working behind future device".

Prof. Robert DuttonKen-Ichi Goto
TSMC Academician
Taiwan Semiconductor Manufacturing Company, Ltd


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