Editor: Halyna Khlyap

Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

eBook: US $24 Special Offer (PDF + Printed Copy): US $106
Printed Copy: US $95
Library License: US $96
ISBN: 978-1-60805-262-2 (Print)
ISBN: 978-1-60805-021-5 (Online)
Year of Publication: 2009
DOI: 10.2174/97816080502151090101

Introduction

This well organized reference book covers the newest and most important practically applicable results in thin film-based semiconductor (A2B6-A4B6 and chalcogenide) sensors, heterojunction-based active elements and other devices. This book is written for researchers, material scientists and advanced students who wish to increase their familiarity with different topics of novel semiconductor material science related to production of thin film-based sensors and active elements for micro- and nanoelectronics. It is also a tool and resource for professionals engaged in novel semiconductor materials technologies. Both basic and applied aspects of semiconductor materials science and technology related to A2B6-A4B6 and chalcogenide compounds, in particular, to ZnCdHgTe semiconductor, are presented in this book. The book features the most important original results in studies and practical applications of A2B6-A4B6 and chalcogenide semiconductor compounds for sensory and micro(nano)electronics. Many important original experimental data as well as results of numerical simulations are included.

Foreword

- Pp. i
Arkadiy Varshavskiy
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Preface

- Pp. ii
Halyna Khlyap
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Semiconductor Structures: Basic Models and Experimental Results

- Pp. 1-20 (20)
Halyna Khlyap

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Heterostructure Growth

- Pp. 21-32 (12)
Halyna Khlyap

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Investigation of Electrical Properties of Active Elements Based on Silicon and A2B6-A4B6 Group Materials

- Pp. 33-51 (19)
Halyna Khlyap

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Engineering of Semiconductor-Based Active Elements by Mechanical Deformation and Ion Implantation Technology

- Pp. 52-62 (11)
Halyna Khlyap

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New Narrow-gap Semiconductor ZnCdHgTe: Growth Technology and Principal Features of ZnCdHgTe-Based Structures

- Pp. 63-77 (15)
Halyna Khlyap

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Electric Field-Induced Characteristics of ZnCdHgTe Films Surface

- Pp. 78-86 (9)
Halyna Khlyap

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Chalcogenide Semiconductors for Sensor Applications

- Pp. 87-95 (9)
Halyna Khlyap

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Design of Active Elements Based on Nanostructural A1B5C6 Materials

- Pp. 96-108 (13)
Halyna Khlyap

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Outlook-Recent Achievments in Design of Semicoductor Materials-Based Nanoelectronics

- Pp. 109-125 (17)
Halyna Khlyap

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Appendix

- Pp. 126
Halyna Khlyap
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Index

- Pp. 127
Halyna Khlyap
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