Editor: Kunihiro Suzuki

Ion Implantation and Activation

Volume 3

eBook: US $49 Special Offer (PDF + Printed Copy): US $135
Printed Copy: US $111
Library License: US $196
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)
ISBN: 978-1-60805-793-1 (Print)
ISBN: 978-1-60805-792-4 (Online)
Year of Publication: 2013
DOI: 10.2174/97816080579241130301

Introduction

Ion Implantation and Activation – Volume 3 presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.

Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The third volume of the series describes the diffusion phenomenon under the thermal equilibrium on point defect concentration and the features of transient enhanced diffusion (TED). The volume also presents methods for the oxidation and redistribution of impurities in polycrystalline silicon for extraction as well as some analytical models related to the VLSI process.

This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Preface

- Pp. i-ii (2)
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Acknowledgements

- Pp. iii
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Diffusion Under Thermal Equilibrium

- Pp. 3-34 (32)
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Paring Diffusion Equation

- Pp. 35-55 (21)
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Experimental Data Associated with Transient Diffusion

- Pp. 56-82 (27)
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Simple Treatment of Transient Enhanced Diffusion

- Pp. 83-100 (18)
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Thermal Oxidation

- Pp. 101-119 (19)
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Segregation

- Pp. 120-127 (8)
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Analytical Diffusion Profiles Under Various Boundary Conditions

- Pp. 128-204 (77)
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Index

- Pp. 205-207 (3)
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