Ion Implantation and Activation

Ion Implantation and Activation

ISSN: 2215-0005 (Print)

Introduction

This eBook series is a collection of theoretical and practical models for ion implattation and activation in semiconductors.






Published Volumes in Series


Ion Implantation and Activation

Ion Implantation and Activation

Volume 3 (Kunihiro Suzuki)

ISSN: 2589-2940 (Print)

ISSN: 2215-0005 (Online)

ISBN: 978-1-60805-792-4 (Online)

ISBN: 978-1-60805-793-1 (Print)

Card List Article

This e-book series presents the derivation process of related models in a comprehensive step by step manner. This volume describes the diffusion phenomenon under the thermal equilibrium on point defect concentration and the features of transient enhanced diffusion (TED). The volume also presents methods for the oxidation and redistribution of impurities in polycrystalline silicon for extraction as well as some analytical models related to the VLSI process.

eBook: US $39 Special Offer (PDF + Printed Copy): US $142
Printed Copy: US $122
Library License: US $156
Ion Implantation and Activation

Ion Implantation and Activation

Volume 2 (Kunihiro Suzuki)

ISSN: 2589-2940 (Print)

ISSN: 2215-0005 (Online)

ISBN: 978-1-60805-790-0 (Online)

ISBN: 978-1-60805-791-7 (Print)

Card List Article

The models described in this volume cover the following topics: two- and three-dimensional profiles in various shapes of the substrates, amorphous layer thickness prediction in wide ion implantation conditions at various ion implantation temperatures, speed of the regrowth of the amorphous layer and the redistribution of the profiles during solid phase epitaxial recrystallization (SPE) and isolated impurities in SPE processes.

eBook: US $49 Special Offer (PDF + Printed Copy): US $127
Printed Copy: US $102
Library License: US $196
Ion Implantation and Activation

Ion Implantation and Activation

Volume 1 (Kunihiro Suzuki)

ISSN: 2589-2940 (Print)

ISSN: 2215-0005 (Online)

ISBN: 978-1-60805-781-8 (Online)

ISBN: 978-1-60805-782-5 (Print)

Card List Article

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling.

eBook: US $79 Special Offer (PDF + Printed Copy): US $208
Printed Copy: US $168
Library License: US $316