Introduction
This eBook series is a collection of theoretical and practical models for ion implattation and activation in semiconductors.
Editor: Kunihiro Suzuki
This eBook series is a collection of theoretical and practical models for ion implattation and activation in semiconductors.
Volume 3 (Kunihiro Suzuki)
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)
ISBN: 978-1-60805-792-4 (Online)
ISBN: 978-1-60805-793-1 (Print)
This e-book series presents the derivation process of related models in a comprehensive step by step manner. This volume describes the diffusion phenomenon under the thermal equilibrium on point defect concentration and the features of transient enhanced diffusion (TED). The volume also presents methods for the oxidation and redistribution of impurities in polycrystalline silicon for extraction as well as some analytical models related to the VLSI process.
Volume 2 (Kunihiro Suzuki)
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)
ISBN: 978-1-60805-790-0 (Online)
ISBN: 978-1-60805-791-7 (Print)
The models described in this volume cover the following topics: two- and three-dimensional profiles in various shapes of the substrates, amorphous layer thickness prediction in wide ion implantation conditions at various ion implantation temperatures, speed of the regrowth of the amorphous layer and the redistribution of the profiles during solid phase epitaxial recrystallization (SPE) and isolated impurities in SPE processes.
Volume 1 (Kunihiro Suzuki)
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)
ISBN: 978-1-60805-781-8 (Online)
ISBN: 978-1-60805-782-5 (Print)
Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling.