Ion Implantation and Activation – Volume 2 presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.
Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this volume cover the following topics: two- and three-dimensional profiles in various shapes of the substrates, amorphous layer thickness prediction in wide ion implantation conditions at various ion implantation temperatures, speed of the regrowth of the amorphous layer and the redistribution of the profiles during solid phase epitaxial recrystallization (SPE) and isolated impurities in SPE processes.
This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.