Ion Implantation and Activation

Volume 1


Kunihiro Suzuki

DOI: 10.2174/97816080578181130101
eISBN: 978-1-60805-781-8, 2013
ISBN: 978-1-60805-782-5
ISSN: 2589-2940 (Print)
ISSN: 2215-0005 (Online)

Indexed in: EBSCO.

Ion Implantation and Activation – Volume 1 presents the derivation process of ...[view complete introduction]
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Simplified LSS Theory

- Pp. 399-451 (53)

Kunihiro Suzuki


The derivation of second-order extended Lindhard-Scharff-Schiott theory (E2LSS) has shown that it is possible to predict accurate ion implantation moment parameters for a projected range of Rp , a straggling parameter ΔRp , and a lateral straggling parameter pt ΔR . Starting from E2LSS theory, we divided the energy region and introduced the ratio r<sub>s</sub> of the nuclear stopping power S<sub>n</sub> to the total stopping power in each energy region, related S<sub>n</sub> to energy straggling, and succeeded in obtaining a simplified analytical model. We showed that the range and the ratio r<sub>s</sub> have a universal dependence on the energy, normalized with respect to the reference energy E<sub>1</sub> where S<sub>n</sub> the electron stopping power at that energy equals. The simplified model can be applied to any combination of ion and substrate atoms, similarly to E2LSS. The simplified model reproduces E2LSS over a wide range of ion implantation conditions and can be used to generate Gaussian profiles easily and obtain physical intuition for ion implantation profiles.

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