Author: Terence K.S. Wong

Semiconductor Strain Metrology: Principles and Applications

eBook: US $59 Special Offer (PDF + Printed Copy): US $148
Printed Copy: US $118
Library License: US $236
ISBN: 978-1-60805-554-8 (Print)
ISBN: 978-1-60805-359-9 (Online)
Year of Publication: 2012
DOI: 10.2174/97816080535991120101

Introduction

This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterization. This e-book employs a tutorial approach to explain the principles and applications of each technique specifically tailored for graduate students and postdoctoral researchers. Selected topics include optical, electron beam, ion beam and synchrotron x-ray techniques. Unlike earlier references, this e-book specifically discusses strain metrology as applied to semiconductor devices with both depth and focus.

Foreword

- Pp. i
Rakesh Kumar
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Preface

- Pp. ii
Terence K.S. Wong
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PART 1: INTRODUCTION

- Pp. 3
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Introduction to Strain Metrology for Semiconductors

- Pp. 4-14 (11)
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Strain, Stress and Semiconductor Properties

- Pp. 15-26 (12)
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PART 2: OPTICAL STRAIN METROLOGY

- Pp. 27
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Variable Angle Spectroscopic Ellipsometry

- Pp. 28-37 (10)
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Photoreflectance Method

- Pp. 38-49 (12)
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Micro-Raman Spectroscopy

- Pp. 50-58 (9)
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PART 3: ELECTRON BEAM STRAIN METROLOGY

- Pp. 59
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Cathodoluminescence Method

- Pp. 60-69 (10)
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Nano-Beam Diffraction and Convergent Beam Electron Diffraction

- Pp. 70-79 (10)
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Dark-Field Electron Holographic Moire Method

- Pp. 80-89 (10)
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PART 4: EMERGING STRAIN METROLOGY

- Pp. 90
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Tip-Enhanced Raman Spectroscopy

- Pp. 91-101 (11)
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Atomic Force Microscopy Digital Image Correlation Method

- Pp. 102-111 (10)
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Synchrotron X-ray Micro/Nanodiffraction Methods

- Pp. 112-125 (14)
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Conclusion and Outlook

- Pp. 126-128 (3)
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Appendix 1

- Pp. 129-131 (3)
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Index

- Pp. 132-136 (5)
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