Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications


Filipe Vaz, Nicolas Martin, Martin Fenker

DOI: 10.2174/97816080515641130101
eISBN: 978-1-60805-156-4, 2013
ISBN: 978-1-60805-157-1

Indexed in: EBSCO.

Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through opto...[view complete introduction]
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Tuneable Properties of Aluminium Oxynitride Thin Films

- Pp. 195-229 (35)

Joel Borges, Nuno P. Barradas, Eduardo Alves, Nicolas Martin, Marie-France Beaufort, Sophie Camelio, Dominique Eyidi, Thierry Girardeau, Fabien Paumier, Jean-Paul Rivière, Filipe Vaz and Luis Marques


In this subchapter is discussed some characteristics and properties of AlO<sub>x</sub>N<sub>y</sub> thin films produced by reactive DC magnetron sputtering. The films were deposited using Ar as working gas and a reactive gas mixture of N<sub>2</sub>+O<sub>2</sub> (17:3). The reactive gas flow was varied in order to produce a wide range of chemical compositions. Sub-stoichiometric AlO<sub>x</sub>N<sub>y</sub> films, with C<sub>O+N</sub>/C<sub>Al</sub> atomic ratios up to 0.85 were produced, with Al-type crystalline structure. Transmission electron microscopy (TEM) analysis and X-ray photoelectron spectroscopy (XPS) spectra suggests that the films are a percolating network, composed by aluminium nanocrystals with different shapes and sizes embedded in an oxide/nitride matrix. The particular composition, structure and morphology of the films results in very different electrical properties, which can be explained using a tunnel barrier conduction mechanism for the electric charge transport, as well as distinct optical responses, such as an unusual large broadband absorption for some films.

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