Editors: Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Nanoelectronic Devices and Application

eBook: US $69 Special Offer (PDF + Printed Copy): US $122
Printed Copy: US $87
Library License: US $276
ISBN: 978-981-5238-25-9 (Print)
ISBN: 978-981-5238-24-2 (Online)
Year of Publication: 2024
DOI: 10.2174/97898152382421240101

Introduction

Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars.

Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7.

A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices.

The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.

Readership

Students in advanced engineering courses; researchers and industry professionals.

Preface

- Pp. i
Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
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List of Contributors

- Pp. iii-iv (2)

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Advancements in GaN Technologies: Power, RF, Digital and Quantum Applications

- Pp. 1-28 (28)
A. Mohanbabu*, S. Maheswari, N. Vinodhkumar, P. Murugapandiyan, R. Saravana Kumar

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GaN-Based Integrated Optical Devices for WideScenario Sensing Applications

- Pp. 29-71 (43)
Xiaoshuai An, Kwai Hei Li*

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Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes

- Pp. 72-89 (18)
Hoang-Duy Nguyen, Mano Bala Sankar Muthu, Hieu Pham Trung Nguyen*

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Effect of Non-Square Potential Profile on Electron Transport Lifetime in AlxGa1-xAs-Based Double Quantum Well Structures

- Pp. 90-114 (25)
Narayan Sahoo*, Ajit K. Sahu, Sangeeta K. Palo, Trinath Sahu

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A Comprehensive Study on High Electron Mobility Transistors

- Pp. 115-129 (15)
G. Purnachandra Rao*, Tanjim Rahman, E Raghuveera, Trupti Ranjan Lenka

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Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models

- Pp. 130-147 (18)
G. Purnachandra Rao*, Tanjim Rahman, Trupti Ranjan Lenka

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An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT

- Pp. 148-159 (12)
G. Purnachandra Rao*, Tanjim Rahman, E. Raghuveera, Trupti Ranjan Lenka

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Next Generation High-Power Material Ga2O3 : Its Properties, Applications, and Challenges

- Pp. 160-188 (29)
M. Nomitha Reddy, Deepak Kumar Panda*

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Investigation of the Impact of Different Dielectrics on the Characteristics of AlN/β-Ga2O3 HEMT

- Pp. 189-202 (14)
Meenakshi Chauhan*, Kanjalochan Jena, Raghuvir Tomar, Abdul Naim Khan

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InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications

- Pp. 203-217 (15)
Ashish Kumar Singh*, Satyabrata Jit

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SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter

- Pp. 218-230 (13)
Radhe Gobinda Debnath*, Srimanta Baishya

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Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET

- Pp. 231-245 (15)
Lakshmi Nivas Teja, Rashi Chaudhary, Shreyas Tiwari, Rajesh Saha*

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Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application

- Pp. 246-257 (12)
Nawal Topno, Raghunandan Swain*, Dinesh Kumar Dash, M. Suresh

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Recent Trends in FET and HEMT-Based Biosensors for Medical Diagnosis

- Pp. 258-270 (13)
E. Raghuveera*, G. Purnachandra Rao, Trupti Ranjan Lenka

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2D Material Tungsten Diselenide (WSe2 ): Its Properties, Applications, and Challenges

- Pp. 271-296 (26)
Vydha Pradeep Kumar, Deepak Kumar Panda*

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Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives

- Pp. 297-334 (38)
Hirakjyoti Choudhury, Rupam Goswami*, Gajendra Kumar, Nayan M. Kakoty

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Subject Index

- Pp. 335-341 (7)
Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
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