- Pp. 101-119 (19)Kunihiro Suzuki
Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO<sub>2</sub>/Si interface. This model gives simple time dependence of growing SiO<sub>2</sub> layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO<sub>2</sub>/Si interface.