Chapter 8

Redistribution of Impurities During Solid Phase Epitaxy

Kunihiro Suzuki

Abstract

It is found that impurities are redistributed during solid phase epitaxy, which cannot be explained by normal diffusion theory. A model is proposed, where the driving force of the redistribution is the phase transition from amorphous and crystalline forms. The model has parameters of a segregation coefficient m, which is between amorphous and crystalline Si, and an introduced parameter of reaction length <i>l</i>, that is, the distance where impurities are exchanged. The model reproduces various experimental data by using corresponding parameter values with the same theoretical framework.

Total Pages: 129-142 (14)

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