Chapter 3

Three-Dimensional Ion Implantation Profile Based on Rp Line Concept

Kunihiro Suzuki

Abstract

We first simplify the existing model for two-dimensional profiles without losing accuracy. Then, a geometrical appreciation is given to the model. Next, a R<sub>p</sub> line concept is generated from the simplified model. We can generate three-dimensional ion implantation profiles related to the R<sub>p</sub> line for various device structures, and demonstrate that this procedure is applied to three-dimensional ion implantation profiles in FinFET. Furthermore, the models are extended to make Pearson function available.

Total Pages: 32-53 (22)

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