Chapter 2

Analytical Model for Two-Dimensional Profile in MOSFET’s

Kunihiro Suzuki


Two-dimensional profile model for ion implantation at high tilt angle was derived, in order to describe the pocket ion implantation of MOSFETs. Then we can generate two-dimensional profile of ion implantation for the full MOS process neglecting diffusion of dopants, in order to predict electrical characteristic of MOSFETs.

Total Pages: 18-31 (14)

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.Ion Implantation and Activation.
.Ion Implantation and Activation.
.Classical Mechanics and Quantum Mechanics: An Historic-Axiomatic Approach.