Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications


Filipe Vaz, Nicolas Martin, Martin Fenker

DOI: 10.2174/97816080515641130101
eISBN: 978-1-60805-156-4, 2013
ISBN: 978-1-60805-157-1

Indexed in: EBSCO.

Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through opto...[view complete introduction]
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HfSiON Films Deposited by Radio Frequency Reactive Sputtering

- Pp. 230-253 (24)

Li-Ping Feng and Zheng-Tang Liu


order to continue scaling electronic devices, an alternative gate material with high dielectric constant (high-k) has been proposed for capacitors, memories, and optoelectronic devices in future complementary metal-oxide-semiconductor (CMOS) generations. At present, HfSiON has gained much attention to be one of the most promising candidate materials to replace conventional SiON-based dielectrics. This chapter is focused on the synthesis and properties of HfSiON prepared by radio frequency magnetron reactive sputtering (RFMRS). This chapter is organized as follows. The scaling issue and major requirements of high-k gate dielectrics are described in Section 1. The fabrication process and properties of HfSiON films deposited by RFRCS are discussed in detail in Section 2. Conclusions and potential future developments are presented in Section 3.

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