Chapter 3
Investigation of Electrical Properties of Active Elements Based on Silicon and A2B6-A4B6 Group Materials
Halyna Khlyap
Abstract
Charge transport mechanisms and photosensitivity of amorhous silicon thin films prepared by magnetron sputtering are investigated at room temperature. The power law and the power-exponential laws governing the currents observed experimentally are revealed. The near-IR photosensitivity of the films can be sufficiently improved by means of high-temperature hydrogenation. Important properties of heterostructures based on PbS, ZnSe, ZnTe and CdTe semiconductors are also discussed along with the results of numerical analysis of experimental data.
Total Pages: 33-51 (19)
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